Parametric expression of subthreshold slope using threshold voltage parameters for MOSFET statistical modeling

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In this paper, we propose a newly developed subthreshold slope (ideality factor) model, whose parameters are solely determined from the threshold voltage data. We succeed to express the ideality factor in terms of the threshold voltage parameters obtained from the body and DIBL effects, which can take care of its dependence on the process data such as channel length, oxide thickness, substrate doping profile, and junction depth in a parametric way. We prove the validity of our model bg comparing ours with the simulation and measurement results from nMOSFET devices with various oxide thickness, channel length, and doping profile.
Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Issue Date
1996-09
Language
English
Article Type
Article
Keywords

SHORT-CHANNEL MOSFETS

Citation

IEEE TRANSACTIONS ON ELECTRON DEVICES, v.43, no.9, pp.1382 - 1386

ISSN
0018-9383
URI
http://hdl.handle.net/10203/75901
Appears in Collection
EE-Journal Papers(저널논문)
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