Improvement of amorphous-carbon active-layer thin-film light-emitting diodes using room-temperature ultrasound treatment

Ultrasound treatment (UST) applied at room temperature enhances electroluminescent intensity (maximum at 600 nm) and optical output in thin-film light-emitting diodes with hydrogenated amorphous-carbon as an active layer. This positive UST effect is attributed to a reduction of the diode series resistance caused by a change of the interface and contact resistances. The UST effect is saturated with increase of the ultrasound amplitude. (C) 1999 American Institute of Physics. [S0003-6951(99)02232-9].
Publisher
American Institute of Physics
Issue Date
1999-08
Language
ENG
Citation

APPLIED PHYSICS LETTERS, v.75, no.6, pp.760 - 762

ISSN
0003-6951
DOI
10.1063/1.124504
URI
http://hdl.handle.net/10203/756
Appears in Collection
EE-Journal Papers(저널논문)
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