HIGH-SPEED METAL-SEMICONDUCTOR-METAL PHOTODIODES WITH ER-DOPED GAAS

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Very high-speed MSM photodiodes have been fabricated on Er-doped GaAs over a doping range of 10(18)-10(20) cm-3. The impulse response (characterized by photoconductive sampling) of these diodes, with finger widths/spacings of 2 mum, has been found to be tunable over a range of about 3 ps-22 ps. Electro-optic sampling was used to characterize MSM diodes with finger widths/spacings of 0.5 mum and 1 mum on a sample with [Er] = 10(19) cm-3, resulting in 3-dB bandwidths of 160 GHz and 140 GHz, respectively, corresponding to pulse widths of 2.7 ps and 3.3 ps. Correlation measurements were also done on the GaAs:Er samples, using an all-electronic Sampling Optical Temporal Analyzer (SOTA) structure.
Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Issue Date
1995-03
Language
English
Article Type
Article
Citation

IEEE ELECTRON DEVICE LETTERS, v.16, no.3, pp.106 - 108

ISSN
0741-3106
DOI
10.1109/55.363239
URI
http://hdl.handle.net/10203/75551
Appears in Collection
EE-Journal Papers(저널논문)
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