Carrier transport through boron-doped amorphous diamond-like carbon p layer of amorphous silicon based p-i-n solar cells

The current transport mechanisms in boron-doped amorphous diamond-like carbon (p-a-DLC:H) used as part of the p layer of hydrogenated amorphous silicon (a-Si:H) solar cells are investigated by studying the temperature dependence of the dark current-voltage characteristics of the solar cell. The cell structure is glass/SnO2/p-a-DLC:H/p-a-SiC:H/i-a-Si:H/n-mu c-Si:H/Al. The temperature dependence of the reverse saturation current and the ideality factor shows that carriers transport dominantly over the p-a-DLC:H by thermionic emission at higher temperatures above about 300 K and through the tunneling process by a hopping mechanism in the p-a-DLC:H at lower temperatures. Using the Schottky barrier model, it is shown that the lowering of the Schottky barrier height by inserting the interfacial p-a-DLC:H between the SnO2 and p-a-SiC:H causes the open circuit voltage and the short wavelength response of the cells to be enhanced. (C) 1999 American Institute of Physics. [S0003-6951(99)01730-1].
Publisher
AMER INST PHYSICS
Issue Date
1999-07
Language
ENG
Citation

APPLIED PHYSICS LETTERS, v.75, no.4, pp.569 - 571

ISSN
0003-6951
DOI
10.1063/1.124444
URI
http://hdl.handle.net/10203/754
Appears in Collection
EE-Journal Papers(저널논문)
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