Ex situ hydrogen passivation effect of visible p-i-n type thin-film light-emitting diode characteristics

The effect of ex situ hydrogen passivation process on the performance of visible hydrogenated amorphous silicon carbide (a-SiC:H)-based p-i-n type thin-film light-emitting diodes has been investigated. An ex situ hydrogen passivation process dramatically improved the device performance; that is, the threshold voltage decreased by about 5 V, the electroluminescence (EL) intensity increased by a factor of about 3, and the EL peak shifted toward a short wavelength from 700 to 600 nm, resulting in an increase of the brightness from 1 cd/m(2) to 35 cd/m(2). This improvement of device performance is caused by the passivation of interface states in the p/i and i/n interfaces as well as midgap states in the luminescent active intrinsic a-SiC:H layer by hydrogen atoms. A process time dependence of the ex situ hydrogen passivation effect on the device performance also has been studied. (C) 1997 American Institute of Physics.
Publisher
AMER INST PHYSICS
Issue Date
1997-03
Language
ENG
Keywords

LAYERS

Citation

JOURNAL OF APPLIED PHYSICS, v.81, no.5, pp.2432 - 2436

ISSN
0021-8979
URI
http://hdl.handle.net/10203/749
Appears in Collection
EE-Journal Papers(저널논문)
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