Nano-trenched local oxidation of silicon isolation using island polysilicon grains

A new isolation structure which is named as nano-trenched local oxidation of silicon (NTLOCOS) is proposed. In NTLOCOS process, island polysilicon grains (IPG) are used for making very slender trenches in silicoin substrate. Preliminary results have shown fast oxidation rate due to enchanced surface area exposed to an oxidizing ambient, high volume ratio, and less field oxide thinning effect. For process optimization, two-dimensional simulation in NTLOCOS with focusing on the effect of nano-trench width is discussed.
Publisher
Electrochemical Society, Inc.
Issue Date
1996-02
Language
ENG
Citation

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, v.143, no.2, pp.639 - 642

ISSN
0013-4651
DOI
10.1149/1.1836493
URI
http://hdl.handle.net/10203/74695
Appears in Collection
EE-Journal Papers(저널논문)
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