Observation of CuPt-Type Ordered Structure in CdZnTe during Organometallic Vapor Phase Epitaxial Growth
A CuPt-type ordered structure in CdZnTe has been observed in HgCdTe/CdxZn1-xTe/GaAs grown by interdiffused multilayer processing. Selected area electron diffraction and cross-sectional, high-resolution transmission electron microscopy have been employed to identify the ordered structure in CdZnTe. Selected area electron diffraction patterns showed two sets of (1/2 1/2 1/2) extra spots with symmetrical intensity through [110] projection, but no extra spots through [(1) over bar 10] projection. In the [110] projection, high-resolution images of ordered CdZnTe showed the doubling periodicity along [(1) over bar 11] or [1(1) over bar1$] through [110] projection. It was determined that the two variants of CuPt-type ordered-CdZnTe were formed on (1) over bar 11) or (1(1) over bar1$ through [110] projection. The two variants were observed with almost equal probability and had similar domain structures.
- Publisher
- JAPAN J APPLIED PHYSICS
- Issue Date
- 1998-01
- Language
- English
- Article Type
- Article
- Keywords
LONG-RANGE ORDER; MOLECULAR-BEAM EPITAXY; ALLOYS; GA0.5IN0.5P; SUBSTRATE; LAYERS; (111)B
- Citation
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, v.37, no.1AB, pp.21 - 23
- ISSN
- 0021-4922
- Appears in Collection
- MS-Journal Papers(저널논문)
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