Hot-carrier degradation mechanism in narrow- and wide-channel n-MOSFETs with recessed LOCOS isolation structure

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Narrow-channel n-MOSFET's with recessed LOGOS (R-LOGOS) isolation structure exhibits less hot carrier-induced degradation than wide-channel n-MOSFET's, but the degradation mechanism of both devices is the same, This new finding is explained bg the fact that in deep submicron MOSFET's with ultra-thin gate oxide, the dominant factor deciding the degradation behavior in narrow- and wide-channel devices is the vertical electric field effect rather than the mechanical stress effect.
Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Issue Date
2000-03
Language
English
Article Type
Article
Keywords

OXIDE-UNGROWTH PHENOMENON; INJECTION; MODEL

Citation

IEEE ELECTRON DEVICE LETTERS, v.21, no.3, pp.130 - 132

ISSN
0741-3106
URI
http://hdl.handle.net/10203/74160
Appears in Collection
EE-Journal Papers(저널논문)
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