DC Field | Value | Language |
---|---|---|
dc.contributor.author | Ang, CH | ko |
dc.contributor.author | Ling, CH | ko |
dc.contributor.author | Cheng, ZY | ko |
dc.contributor.author | Kim, SJ | ko |
dc.contributor.author | Cho, Byung Jin | ko |
dc.date.accessioned | 2013-03-02T15:01:55Z | - |
dc.date.available | 2013-03-02T15:01:55Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 2000-12 | - |
dc.identifier.citation | IEEE TRANSACTIONS ON NUCLEAR SCIENCE, v.47, no.6, pp.2764 - 4 | - |
dc.identifier.issn | 0018-9499 | - |
dc.identifier.uri | http://hdl.handle.net/10203/74096 | - |
dc.description.abstract | The effects of bias annealing and thermal annealing on radiation-induced leakage currents (RILC) in thin-gate oxides (4.5 nm) have been studied. To decouple these two effects, we have performed the bias annealing at room temperature and the thermal annealing at elevated temperatures without bias, RILC has been found to decrease after both bias and thermal annealings, We have also observed that the decrease of RILC during bias annealing mas greatly enhanced in a hydrogen ambient. This evidence strongly indicates that trapped holes contribute significantly to RILC and suggests that the bias annealing of RILC was likely due to the annealing of trapped holes. | - |
dc.language | English | - |
dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | - |
dc.subject | MOS CAPACITORS | - |
dc.subject | MOLECULAR-HYDROGEN | - |
dc.subject | IONIZING-RADIATION | - |
dc.subject | STATE GENERATION | - |
dc.subject | INTERFACE STATES | - |
dc.subject | HOLE TRAPS | - |
dc.subject | SILICON | - |
dc.subject | MECHANISM | - |
dc.subject | REVERSIBILITY | - |
dc.subject | DEVICES | - |
dc.title | Bias and thermal annealings of radiation-induced leakage currents in thin-gate oxides | - |
dc.type | Article | - |
dc.identifier.wosid | 000166992400009 | - |
dc.identifier.scopusid | 2-s2.0-0034450613 | - |
dc.type.rims | ART | - |
dc.citation.volume | 47 | - |
dc.citation.issue | 6 | - |
dc.citation.beginningpage | 2764 | - |
dc.citation.endingpage | 4 | - |
dc.citation.publicationname | IEEE TRANSACTIONS ON NUCLEAR SCIENCE | - |
dc.contributor.localauthor | Cho, Byung Jin | - |
dc.contributor.nonIdAuthor | Ang, CH | - |
dc.contributor.nonIdAuthor | Ling, CH | - |
dc.contributor.nonIdAuthor | Cheng, ZY | - |
dc.contributor.nonIdAuthor | Kim, SJ | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordAuthor | bias annealing | - |
dc.subject.keywordAuthor | MOS | - |
dc.subject.keywordAuthor | radiation-induced leakage current | - |
dc.subject.keywordAuthor | reliability | - |
dc.subject.keywordAuthor | thin-gate oxide | - |
dc.subject.keywordPlus | MOS CAPACITORS | - |
dc.subject.keywordPlus | MOLECULAR-HYDROGEN | - |
dc.subject.keywordPlus | IONIZING-RADIATION | - |
dc.subject.keywordPlus | STATE GENERATION | - |
dc.subject.keywordPlus | INTERFACE STATES | - |
dc.subject.keywordPlus | HOLE TRAPS | - |
dc.subject.keywordPlus | SILICON | - |
dc.subject.keywordPlus | MECHANISM | - |
dc.subject.keywordPlus | REVERSIBILITY | - |
dc.subject.keywordPlus | DEVICES | - |
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