Bias and thermal annealings of radiation-induced leakage currents in thin-gate oxides

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The effects of bias annealing and thermal annealing on radiation-induced leakage currents (RILC) in thin-gate oxides (4.5 nm) have been studied. To decouple these two effects, we have performed the bias annealing at room temperature and the thermal annealing at elevated temperatures without bias, RILC has been found to decrease after both bias and thermal annealings, We have also observed that the decrease of RILC during bias annealing mas greatly enhanced in a hydrogen ambient. This evidence strongly indicates that trapped holes contribute significantly to RILC and suggests that the bias annealing of RILC was likely due to the annealing of trapped holes.
Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Issue Date
2000-12
Language
English
Article Type
Article
Keywords

MOS CAPACITORS; MOLECULAR-HYDROGEN; IONIZING-RADIATION; STATE GENERATION; INTERFACE STATES; HOLE TRAPS; SILICON; MECHANISM; REVERSIBILITY; DEVICES

Citation

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, v.47, no.6, pp.2764 - 4

ISSN
0018-9499
URI
http://hdl.handle.net/10203/74096
Appears in Collection
EE-Journal Papers(저널논문)
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