Stable transverse mode emission in vertical-cavity surface-emitting lasers antiguided by amorphous GaAs layer

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The authors report the successful development of a method stabilising the fundamental transverse mode of a vertical-cavity surface-emitting laser using a low-temperature-deposited amorphous GaAs (a-GaAs) layer of a high refractive index. For a device of 10 mu m diameter, stable fundamental mode emission has been observed over a wide range of current. Results are attributed to the antiguide effect of the a-GaAs-buried structure.
Publisher
IEE-INST ELEC ENG
Issue Date
1996-01
Language
English
Article Type
Article
Citation

ELECTRONICS LETTERS, v.32, no.2, pp.116 - 117

ISSN
0013-5194
DOI
10.1049/el:19960070
URI
http://hdl.handle.net/10203/74078
Appears in Collection
EE-Journal Papers(저널논문)
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