Transverse mode characteristics of vertical-cavity surface-emitting lasers buried in amorphous GaAs antiguide layer
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Yoo, BS | ko |
| dc.contributor.author | Chu, HY | ko |
| dc.contributor.author | Park, HyoHoon | ko |
| dc.contributor.author | Lee, HG | ko |
| dc.contributor.author | Lee, JJ | ko |
| dc.date.accessioned | 2013-03-02T14:56:44Z | - |
| dc.date.available | 2013-03-02T14:56:44Z | - |
| dc.date.created | 2012-02-06 | - |
| dc.date.created | 2012-02-06 | - |
| dc.date.issued | 1997 | - |
| dc.identifier.citation | IEEE JOURNAL OF QUANTUM ELECTRONICS, v.33, no.10, pp.1794 - 1800 | - |
| dc.identifier.issn | 0018-9197 | - |
| dc.identifier.uri | http://hdl.handle.net/10203/74077 | - |
| dc.description.abstract | We report the transverse mode characteristics of InGaAs-GaAs vertical-cavity surface-emitting lasers (VCSEL's) buried in a low-temperature-deposited amorphous GaAs (a-GaAs) layer. The maximum current maintaining a stable fundamental transverse mode is increased by the antiguide effect of the a-GaAs clad with a high refractive index, For 10- and 15-mu m-diameter devices, we attain a stable single-mode emission over a wide range of current, The antiguide effects and transverse mode profiles in vertical cavity lasers buried in the high refractive index clad are calculated using a two-dimensional beam propagation method. | - |
| dc.language | English | - |
| dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | - |
| dc.subject | SINGLE-MODE | - |
| dc.subject | EMISSION | - |
| dc.subject | DIODES | - |
| dc.title | Transverse mode characteristics of vertical-cavity surface-emitting lasers buried in amorphous GaAs antiguide layer | - |
| dc.type | Article | - |
| dc.identifier.wosid | A1997XX24900024 | - |
| dc.identifier.scopusid | 2-s2.0-0031258025 | - |
| dc.type.rims | ART | - |
| dc.citation.volume | 33 | - |
| dc.citation.issue | 10 | - |
| dc.citation.beginningpage | 1794 | - |
| dc.citation.endingpage | 1800 | - |
| dc.citation.publicationname | IEEE JOURNAL OF QUANTUM ELECTRONICS | - |
| dc.contributor.localauthor | Park, HyoHoon | - |
| dc.contributor.nonIdAuthor | Yoo, BS | - |
| dc.contributor.nonIdAuthor | Chu, HY | - |
| dc.contributor.nonIdAuthor | Lee, HG | - |
| dc.contributor.nonIdAuthor | Lee, JJ | - |
| dc.type.journalArticle | Article | - |
| dc.subject.keywordAuthor | amorphous semiconductor materials | - |
| dc.subject.keywordAuthor | finite difference methods | - |
| dc.subject.keywordAuthor | laser modes | - |
| dc.subject.keywordAuthor | semiconductor lasers | - |
| dc.subject.keywordAuthor | surface-emitting lasers | - |
| dc.subject.keywordPlus | SINGLE-MODE | - |
| dc.subject.keywordPlus | EMISSION | - |
| dc.subject.keywordPlus | DIODES | - |
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