Transverse mode characteristics of vertical-cavity surface-emitting lasers buried in amorphous GaAs antiguide layer

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We report the transverse mode characteristics of InGaAs-GaAs vertical-cavity surface-emitting lasers (VCSEL's) buried in a low-temperature-deposited amorphous GaAs (a-GaAs) layer. The maximum current maintaining a stable fundamental transverse mode is increased by the antiguide effect of the a-GaAs clad with a high refractive index, For 10- and 15-mu m-diameter devices, we attain a stable single-mode emission over a wide range of current, The antiguide effects and transverse mode profiles in vertical cavity lasers buried in the high refractive index clad are calculated using a two-dimensional beam propagation method.
Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Issue Date
1997
Language
English
Article Type
Article
Keywords

SINGLE-MODE; EMISSION; DIODES

Citation

IEEE JOURNAL OF QUANTUM ELECTRONICS, v.33, no.10, pp.1794 - 1800

ISSN
0018-9197
URI
http://hdl.handle.net/10203/74077
Appears in Collection
EE-Journal Papers(저널논문)
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