HIGH-QUALITY OXYNITRIDE GATE DIELECTRICS PREPARED BY REOXIDATION OF NH3-NITRIDED SIO2 IN N2O AMBIENT

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dc.contributor.authorYoon, Gi-Wanko
dc.contributor.authorHan, LKko
dc.contributor.authorKim, GWko
dc.contributor.authorYan, Jko
dc.contributor.authorKwong, DLko
dc.date.accessioned2013-03-02T14:37:12Z-
dc.date.available2013-03-02T14:37:12Z-
dc.date.created2012-02-06-
dc.date.created2012-02-06-
dc.date.created2012-02-06-
dc.date.issued1995-07-
dc.identifier.citationELECTRONICS LETTERS, v.31, no.14, pp.1196 - 1198-
dc.identifier.issn0013-5194-
dc.identifier.urihttp://hdl.handle.net/10203/74010-
dc.description.abstractThe significant advantages of reoxidation of NH3-nitrided SiO2 using N2O, as opposed to O-2, in a rapid thermal system have been demonstrated. MOS capacitors with N2O-reoxidised NH3-nitrided SiO2 show improved charge-to-breakdown characteristics and suppressed interface state generation under both injection polarities compared to those with pure SiO2 and O-2-reoxidised NH3-nitrided SiO2. Significant reduction of nitridation-induced traps by N2O reoxidation is mainly responsible for these improvements.-
dc.languageEnglish-
dc.publisherIEE-INST ELEC ENG-
dc.subjectREOXIDIZED NITRIDED OXIDES-
dc.subjectPOLARITY-
dc.subjectMOSFETS-
dc.titleHIGH-QUALITY OXYNITRIDE GATE DIELECTRICS PREPARED BY REOXIDATION OF NH3-NITRIDED SIO2 IN N2O AMBIENT-
dc.typeArticle-
dc.identifier.wosidA1995RL03200061-
dc.identifier.scopusid2-s2.0-0029637855-
dc.type.rimsART-
dc.citation.volume31-
dc.citation.issue14-
dc.citation.beginningpage1196-
dc.citation.endingpage1198-
dc.citation.publicationnameELECTRONICS LETTERS-
dc.identifier.doi10.1049/el:19950806-
dc.contributor.localauthorYoon, Gi-Wan-
dc.contributor.nonIdAuthorHan, LK-
dc.contributor.nonIdAuthorKim, GW-
dc.contributor.nonIdAuthorYan, J-
dc.contributor.nonIdAuthorKwong, DL-
dc.type.journalArticleArticle-
dc.subject.keywordAuthorOXIDATION-
dc.subject.keywordAuthorNITRIDATION-
dc.subject.keywordAuthorRAPID THERMAL PROCESSING-
dc.subject.keywordPlusREOXIDIZED NITRIDED OXIDES-
dc.subject.keywordPlusPOLARITY-
dc.subject.keywordPlusMOSFETS-
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