DC Field | Value | Language |
---|---|---|
dc.contributor.author | Yoon, Gi-Wan | ko |
dc.contributor.author | Han, LK | ko |
dc.contributor.author | Kim, GW | ko |
dc.contributor.author | Yan, J | ko |
dc.contributor.author | Kwong, DL | ko |
dc.date.accessioned | 2013-03-02T14:37:12Z | - |
dc.date.available | 2013-03-02T14:37:12Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 1995-07 | - |
dc.identifier.citation | ELECTRONICS LETTERS, v.31, no.14, pp.1196 - 1198 | - |
dc.identifier.issn | 0013-5194 | - |
dc.identifier.uri | http://hdl.handle.net/10203/74010 | - |
dc.description.abstract | The significant advantages of reoxidation of NH3-nitrided SiO2 using N2O, as opposed to O-2, in a rapid thermal system have been demonstrated. MOS capacitors with N2O-reoxidised NH3-nitrided SiO2 show improved charge-to-breakdown characteristics and suppressed interface state generation under both injection polarities compared to those with pure SiO2 and O-2-reoxidised NH3-nitrided SiO2. Significant reduction of nitridation-induced traps by N2O reoxidation is mainly responsible for these improvements. | - |
dc.language | English | - |
dc.publisher | IEE-INST ELEC ENG | - |
dc.title | HIGH-QUALITY OXYNITRIDE GATE DIELECTRICS PREPARED BY REOXIDATION OF NH3-NITRIDED SIO2 IN N2O AMBIENT | - |
dc.type | Article | - |
dc.identifier.wosid | A1995RL03200061 | - |
dc.identifier.scopusid | 2-s2.0-0029637855 | - |
dc.type.rims | ART | - |
dc.citation.volume | 31 | - |
dc.citation.issue | 14 | - |
dc.citation.beginningpage | 1196 | - |
dc.citation.endingpage | 1198 | - |
dc.citation.publicationname | ELECTRONICS LETTERS | - |
dc.identifier.doi | 10.1049/el:19950806 | - |
dc.contributor.localauthor | Yoon, Gi-Wan | - |
dc.contributor.nonIdAuthor | Han, LK | - |
dc.contributor.nonIdAuthor | Kim, GW | - |
dc.contributor.nonIdAuthor | Yan, J | - |
dc.contributor.nonIdAuthor | Kwong, DL | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordAuthor | OXIDATION | - |
dc.subject.keywordAuthor | NITRIDATION | - |
dc.subject.keywordAuthor | RAPID THERMAL PROCESSING | - |
dc.subject.keywordPlus | REOXIDIZED NITRIDED OXIDES | - |
dc.subject.keywordPlus | POLARITY | - |
dc.subject.keywordPlus | MOSFETS | - |
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