HIGH-QUALITY OXYNITRIDE GATE DIELECTRICS PREPARED BY REOXIDATION OF NH3-NITRIDED SIO2 IN N2O AMBIENT

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The significant advantages of reoxidation of NH3-nitrided SiO2 using N2O, as opposed to O-2, in a rapid thermal system have been demonstrated. MOS capacitors with N2O-reoxidised NH3-nitrided SiO2 show improved charge-to-breakdown characteristics and suppressed interface state generation under both injection polarities compared to those with pure SiO2 and O-2-reoxidised NH3-nitrided SiO2. Significant reduction of nitridation-induced traps by N2O reoxidation is mainly responsible for these improvements.
Publisher
IEE-INST ELEC ENG
Issue Date
1995-07
Language
English
Article Type
Article
Keywords

REOXIDIZED NITRIDED OXIDES; POLARITY; MOSFETS

Citation

ELECTRONICS LETTERS, v.31, no.14, pp.1196 - 1198

ISSN
0013-5194
DOI
10.1049/el:19950806
URI
http://hdl.handle.net/10203/74010
Appears in Collection
EE-Journal Papers(저널논문)
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