Radiation and electrical stress-induced hole trap-assisted tunneling currents in ultrathin gate oxides

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Based on carrier-separation measurement on pMOSFET, we show the existence of hole trap-assisted tunneling (HTAT) current after 10 keV X-ray irradiation on ultrathin gate oxide. The characteristics of this current have been studied in detail and compared with the corresponding current due to electrical stress. No essential difference is found between the HTAT currents due to ionizing radiation and electrical stress. The results indicate that these two currents have similar origin. (C) 2000 Elsevier Science Ltd. All rights reserved.
Publisher
PERGAMON-ELSEVIER SCIENCE LTD
Issue Date
2000-11
Language
English
Article Type
Article
Keywords

INDUCED LEAKAGE CURRENT; SILICON DIOXIDE FILMS; GENERATION; INJECTION; MECHANISM

Citation

SOLID-STATE ELECTRONICS, v.44, no.11, pp.2001 - 2007

ISSN
0038-1101
DOI
10.1016/S0038-1101(00)00156-8
URI
http://hdl.handle.net/10203/73879
Appears in Collection
EE-Journal Papers(저널논문)
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