Does short wavelength lithography process degrade the integrity of thin gate oxide?

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This paper presents the results of investigation on integrity of X-ray/E-beam irradiated thin gate oxides. A large increase of gate oxide leakage current is observed after irradiation on thin gate oxide under X-ray/E-beam lithography conditions. This radiation-induced leakage current (RILC) can be removed by a thermal annealing at 400 degrees C and above, without adverse effect to the oxide integrity. In addition, it is found that ionizing exposures do not significantly affect the breakdown and quasi-breakdown characteristics in ultra-thin oxide. (C) 2000 Elsevier Science Ltd. All rights reserved.
Publisher
PERGAMON-ELSEVIER SCIENCE LTD
Issue Date
2000
Language
English
Article Type
Article; Proceedings Paper
Keywords

X-RAY-LITHOGRAPHY; INDUCED LEAKAGE CURRENT; RADIATION-DAMAGE; BIPOLAR; DEVICES

Citation

MICROELECTRONICS RELIABILITY, v.40, pp.1609 - 1613

ISSN
0026-2714
DOI
10.1016/S0026-2714(00)00178-5
URI
http://hdl.handle.net/10203/73878
Appears in Collection
EE-Journal Papers(저널논문)
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