DC Field | Value | Language |
---|---|---|
dc.contributor.author | Xu, Z | ko |
dc.contributor.author | Cho, Byung Jin | ko |
dc.contributor.author | Li, MF | ko |
dc.date.accessioned | 2013-03-02T14:03:24Z | - |
dc.date.available | 2013-03-02T14:03:24Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 2000-10 | - |
dc.identifier.citation | MICROELECTRONICS RELIABILITY, v.40, pp.1341 - 1346 | - |
dc.identifier.issn | 0026-2714 | - |
dc.identifier.uri | http://hdl.handle.net/10203/73877 | - |
dc.description.abstract | Annealing behavior of thin gate oxide alter quasi-breakdown (QB) has been investigated. The res;lt implies that the QB leakage current is consisted, of two components: the enhanced tunneling due to locally thinned oxide at interface-damaged region and the conduction through a shortening path. The change of leakage current during annealing is a competitive process of changes of these two components - the recovery of interface damage and the expansion of the shortening path in bulk oxide. A unified model is proposed to explain the mechanism of conduction in QB. (C) 2000 Elsevier Science Ltd. All rights reserved. | - |
dc.language | English | - |
dc.publisher | PERGAMON-ELSEVIER SCIENCE LTD | - |
dc.title | Annealing behavior of gate oxide leakage current after quasi-breakdown | - |
dc.type | Article | - |
dc.identifier.wosid | 000089532800017 | - |
dc.identifier.scopusid | 2-s2.0-3342903803 | - |
dc.type.rims | ART | - |
dc.citation.volume | 40 | - |
dc.citation.beginningpage | 1341 | - |
dc.citation.endingpage | 1346 | - |
dc.citation.publicationname | MICROELECTRONICS RELIABILITY | - |
dc.identifier.doi | 10.1016/S0026-2714(00)00129-3 | - |
dc.contributor.localauthor | Cho, Byung Jin | - |
dc.contributor.nonIdAuthor | Xu, Z | - |
dc.contributor.nonIdAuthor | Li, MF | - |
dc.type.journalArticle | Article; Proceedings Paper | - |
dc.subject.keywordPlus | SOFT BREAKDOWN | - |
dc.subject.keywordPlus | STRESS | - |
dc.subject.keywordPlus | QUASIBREAKDOWN | - |
dc.subject.keywordPlus | RELIABILITY | - |
dc.subject.keywordPlus | MECHANISM | - |
dc.subject.keywordPlus | SILICON | - |
dc.subject.keywordPlus | DEVICES | - |
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