Annealing behavior of gate oxide leakage current after quasi-breakdown

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Annealing behavior of thin gate oxide alter quasi-breakdown (QB) has been investigated. The res;lt implies that the QB leakage current is consisted, of two components: the enhanced tunneling due to locally thinned oxide at interface-damaged region and the conduction through a shortening path. The change of leakage current during annealing is a competitive process of changes of these two components - the recovery of interface damage and the expansion of the shortening path in bulk oxide. A unified model is proposed to explain the mechanism of conduction in QB. (C) 2000 Elsevier Science Ltd. All rights reserved.
Publisher
PERGAMON-ELSEVIER SCIENCE LTD
Issue Date
2000
Language
English
Article Type
Article; Proceedings Paper
Keywords

SOFT BREAKDOWN; STRESS; QUASIBREAKDOWN; RELIABILITY; MECHANISM; SILICON; DEVICES

Citation

MICROELECTRONICS RELIABILITY, v.40, pp.1341 - 1346

ISSN
0026-2714
DOI
10.1016/S0026-2714(00)00129-3
URI
http://hdl.handle.net/10203/73877
Appears in Collection
EE-Journal Papers(저널논문)
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