Giga-Bit급 DRAM을 위한 고유전 (Ba,Sr)TiO3 박막 커패시터의 유전완화 특성에 대한 회로 모델 A Circuit Model of the Dielectric Relaxation of the High Dielectric (Ba,Sr) TiO3 Thin Film Capacitor for Giga-Bit Scale DRAMs

Publisher
대한전자공학회
Issue Date
2000-04
Language
KOR
Citation

전자공학회논문지, v.37, no.4, pp.253 - 262

ISSN
1229-6368
URI
http://hdl.handle.net/10203/73504
Appears in Collection
EE-Journal Papers(저널논문)
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