Simultaneous and Accurate Formation of Variously Shaped Holes in Silicon Substrate

An electrochemical etching method for forming high-precision holes in silicon substrates is presented. An n-type layer is formed in the periphery of the hole pattern in order to define accurately current flow and a solution (1:2 HF:H2O) which does not chemically attack silicon is used, The silicon substrate is etched from the back side of the silicon wafer by means of a novel electrochemical etching method. Circular and square holes spaced 400 mu m apart are formed simultaneously and accurately in a boron doped (100) silicon substrate. The circular and square holes are 400 mu m in diameter and 400 mu m on side, respectively. The combination of an n-type layer and electrochemical etching enables variously shaped holes which can be widely applied in silicon micromachining to be formed concurrently with high precision.
Publisher
Japan Soc Applied Physics
Issue Date
1997-05
Language
ENG
Citation

JAPANESE JOURNAL OF APPLIED PHYSICS, v.36, no.5A, pp.L529 - L531

ISSN
0021-4922
URI
http://hdl.handle.net/10203/73240
Appears in Collection
RIMS Journal Papers
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