Stability of Hydrogenated P-Channel Polycrystalline Silicon Thin Film Transistors with Electron Cyclotron Resonance N2O-Plasma Gate Oxide
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | J.W.Lee | ko |
| dc.contributor.author | N.I.Lee | ko |
| dc.contributor.author | C.H.Han | ko |
| dc.date.accessioned | 2013-02-28T06:24:27Z | - |
| dc.date.available | 2013-02-28T06:24:27Z | - |
| dc.date.created | 2012-02-06 | - |
| dc.date.created | 2012-02-06 | - |
| dc.date.issued | 1999-01 | - |
| dc.identifier.citation | IEEE ELECTRON DEVICE LETTERS, v.20, no.1 | - |
| dc.identifier.issn | 0741-3106 | - |
| dc.identifier.uri | http://hdl.handle.net/10203/73231 | - |
| dc.language | English | - |
| dc.publisher | IEEE-Inst Electrical Electronics Engineers Inc | - |
| dc.title | Stability of Hydrogenated P-Channel Polycrystalline Silicon Thin Film Transistors with Electron Cyclotron Resonance N2O-Plasma Gate Oxide | - |
| dc.type | Article | - |
| dc.type.rims | ART | - |
| dc.citation.volume | 20 | - |
| dc.citation.issue | 1 | - |
| dc.citation.publicationname | IEEE ELECTRON DEVICE LETTERS | - |
| dc.contributor.localauthor | C.H.Han | - |
| dc.contributor.nonIdAuthor | J.W.Lee | - |
| dc.contributor.nonIdAuthor | N.I.Lee | - |
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