Stability of Hydrogenated P-Channel Polycrystalline Silicon Thin Film Transistors with Electron Cyclotron Resonance N2O-Plasma Gate Oxide

Publisher
IEEE-Inst Electrical Electronics Engineers Inc
Issue Date
1999-01
Language
ENG
Citation

IEEE ELECTRON DEVICE LETTERS, v.20, no.1

ISSN
0741-3106
URI
http://hdl.handle.net/10203/73231
Appears in Collection
RIMS Journal Papers
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