STRUCTURE AND ELECTRICAL-PROPERTIES OF PB(ZR,TI)O-3 THIN-FILMS DEPOSITED BY REACTIVE SPUTTERING USING MULTI-TARGETS

Lead zirconate titanate (PZT) thin films have been grown on Pt/SiO2/Si substrates by reactive sputtering using multiple metal targets. The PZT crystalline structure and the lead content have been studied and crystal quality effects on the electrical properties were investigated. The film structure deposited at 550 degrees C changed from polycrystalline to the (100)-oriented direction with increasing lead target power. This structural change has a marked influence on dielectric and fatigue properties. Highly oriented films have high remanent polarization and high fatigue resistance. Also we investigated leakage current characteristics of the deposited film with voltage and time.
Publisher
ELSEVIER SCIENCE SA LAUSANNE
Issue Date
1995-10
Language
ENG
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Citation

THIN SOLID FILMS, v.266, no.2, pp.140 - 144

ISSN
0040-6090
DOI
10.1016/0040-6090(95)06609-8
URI
http://hdl.handle.net/10203/73225
Appears in Collection
MS-Journal Papers(저널논문)
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