Lead zirconate titanate (PZT) thin films have been grown on Pt/SiO2/Si substrates by reactive sputtering using multiple metal targets. The PZT crystalline structure and the lead content have been studied and crystal quality effects on the electrical properties were investigated. The film structure deposited at 550 degrees C changed from polycrystalline to the (100)-oriented direction with increasing lead target power. This structural change has a marked influence on dielectric and fatigue properties. Highly oriented films have high remanent polarization and high fatigue resistance. Also we investigated leakage current characteristics of the deposited film with voltage and time.