Measurement of the steady-state minority carrier diffusion length in a HgCdTe photodiode

A new method is reported for estimating the steady-state effective minority carrier diffusion length. The diffusion length is determined by measuring photocurrents which decrease exponentially with the distance between the junction edge and the region into which environmental infrared light penetrates. The region exposed to infrared radiation can be defined using an optical shadow mask. Using this method, the steady-state effective minority carrier diffusion length of photodiodes fabricated on p-type bulk Hg0.7Cd0.3Te was determined to be 19 mu m at all points on the wafer.
Publisher
JAPAN J APPLIED PHYSICS
Issue Date
1996-10
Language
ENG
Article Type
Article
Keywords

SCANNING ELECTRON-MICROSCOPY; LIFETIME

Citation

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, v.35, no.10B, pp.1321 - 1323

ISSN
0021-4922
URI
http://hdl.handle.net/10203/73209
Appears in Collection
EE-Journal Papers(저널논문)
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