Direct observation of above-barrier quasibound states in $In_xGa_{1-x}$As/AlAs/GaAs quantum wells

We report the direct observation of numerous above-barrier quasibound states of potential barriers, formed by a thick layer of GaAs sandwiched between ultrathin AlAs interface layers in InxGa1-xAs/GaAs strained quantum wells. Interband transitions between the conduction and the valence subband up to n = 26 an clearly observed in the room-temperature photoreflectance spectra. Fairly good agreement is obtained between the peak positions and the calculated interband transitions of the quasibound states found in the GaAs barriers.
Publisher
Amer Physical Soc
Issue Date
1996-07
Language
ENG
Citation

PHYSICAL REVIEW B, v.54, no.3, pp.1541 - 1544

ISSN
1098-0121
URI
http://hdl.handle.net/10203/72760
Appears in Collection
PH-Journal Papers(저널논문)
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