SOI 양자소자 제작과 단전자터널링 특성 SOI Quantum-Device Fabriacion and Single-Electron Tunneling Characteristics

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Publisher
한국물리학회
Issue Date
1998-03
Language
English
Citation

응용물리, v.11, no.3, pp.310 - 314

ISSN
1013-7009
URI
http://hdl.handle.net/10203/72689
Appears in Collection
RIMS Journal PapersEE-Journal Papers(저널논문)
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