Deposition of PZT films by MOCVD at low temperature and their change in properties with annealing temperature and Zr/Ti ratio

Abstract

Pb-y(ZrxTi1-x)O-3 films with y = 0.90-0.95 and x = 0.30-0.60 were deposited by metal organic chemical vapour deposition (MOCVD) at low temperatures (360-390 degrees C) at which the homogeneous gas-phase reaction was successfully inhibited. In this low-temperature range, the Pb content increased with increasing temperature and the Zr/Ti ratio was controlled by the carrier gas flow rate. The films were subjected to annealing to form perovskite; 700 degrees C was identified as the optimum annealing temperature. On approaching the morphotropic phase boundary (MPB) region from the Ti-rich composition, the dielectric constant increased and the coercive field decreased.