Deposition of Heteroepitaxial Diamond Films on (100) Silicon in the Dense Film

Almost perfectly oriented heteroepitaxial diamond film was deposited on the (100)Si substrate by the carburization, bias-enhanced nucleation, and growth process in a dense plasma using a bell-jar-type microwave-plasma chemical vapor deposition (CVD) system with an ASTeX 1.5 kW magnetron plasma source. This dense plasma was a prerequisite for the perfect orientation and was not obtained simply by increasing microwave power, but was obtained by introducing a graphite block between the substrate and the substrate holder. The plasma was concentrated over the substrate especially at the four corners with a thickness of several millimeters. (C) 1996 American Institute of Physics.
Publisher
Amer Inst Physics
Issue Date
1996
Language
ENG
Keywords

SILICON

Citation

APPLIED PHYSICS LETTERS, v.68, no.6, pp.756 -

ISSN
0003-6951
DOI
10.1063/1.116732
URI
http://hdl.handle.net/10203/71463
Appears in Collection
MS-Journal Papers(저널논문)
Files in This Item
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