Reduction of stress-induced leakage currents in thin oxides by application of a low post-stress gate bias

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We have observed that stress-induced leakage currents (SILC) in thin gate oxides (4.5 nm) could be reduced by applying a low gate bias to the oxides after stress, regardless of the polarity of the applied gate bias. The reduction of SILC increased with the applied gate bias and began to saturate after 10(5) s. In addition, the reduction of SILC was significantly enhanced in a hydrogen ambient, suggesting a strong link between the reduction of SILC and trapped-hole annealing. (C) 2000 American Institute of Physics. [S0021-8979(00)04117-7].
Publisher
AMER INST PHYSICS
Issue Date
2000-09
Language
English
Article Type
Article
Keywords

SILICON DIOXIDE FILMS; MECHANISM; INTERFACE; TRAPS; FIELD

Citation

JOURNAL OF APPLIED PHYSICS, v.88, no.5, pp.3087 - 3089

ISSN
0021-8979
DOI
10.1063/1.1287403
URI
http://hdl.handle.net/10203/71336
Appears in Collection
EE-Journal Papers(저널논문)
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