인듐 확산에 의해 제작된 HgCdTe 아이오드의 전기적 특성

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dc.contributor.author이희철ko
dc.contributor.author박승만ko
dc.contributor.author김근홍ko
dc.contributor.author김재묵ko
dc.contributor.author김충기ko
dc.date.accessioned2013-02-27T22:22:39Z-
dc.date.available2013-02-27T22:22:39Z-
dc.date.created2012-02-06-
dc.date.created2012-02-06-
dc.date.issued1996-12-
dc.identifier.citation응용물리, v.9, no.특별호, pp.38 - 41-
dc.identifier.issn1013-7009-
dc.identifier.urihttp://hdl.handle.net/10203/71183-
dc.languageKorean-
dc.publisher한국물리학회-
dc.title인듐 확산에 의해 제작된 HgCdTe 아이오드의 전기적 특성-
dc.typeArticle-
dc.type.rimsART-
dc.citation.volume9-
dc.citation.issue특별호-
dc.citation.beginningpage38-
dc.citation.endingpage41-
dc.citation.publicationname응용물리-
dc.contributor.localauthor이희철-
dc.contributor.nonIdAuthor박승만-
dc.contributor.nonIdAuthor김근홍-
dc.contributor.nonIdAuthor김재묵-
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EE-Journal Papers(저널논문)
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