Exciton binding energies in GaN/AlGaN quantum-well structures

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We calculate the exciton binding energies in GaN/AlxGa1-xN quantum wells using a variational technique in momentum space and an effective-mass theory, where the hole kinetic energy is described by a Rashba-Sheka-Pikus Hamiltonian. We investigate the effects of well width and Al molar fraction in the barrier region, including the valence band hybridization and the strain effect in the heterojunctions. Using the effective-mass parameters determined from the cubic approximation for the wurtzite structure, the calculated exciton peak energies are found to be in good agreement with available experimental data. In optical absorption spectra, we find several forbidden transitions which are attributed to the valence band mixing.
Publisher
IOP PUBLISHING LTD
Issue Date
1998-08
Language
English
Article Type
Article
Keywords

OPTICAL-PROPERTIES; VAPOR-DEPOSITION; GAN; LAYERS; SAPPHIRE; NITRIDE; FILMS; ALN

Citation

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, v.13, no.8, pp.876 - 881

ISSN
0268-1242
URI
http://hdl.handle.net/10203/71076
Appears in Collection
PH-Journal Papers(저널논문)
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