Emitter size effects on DC current gain and RF performance in InP/InGaAs HBT's

Cited 1 time in webofscience Cited 0 time in scopus
  • Hit : 337
  • Download : 0
We have presented a comprehensive investigation of the emitter size effects on DC current gain, cut-off frequency (f(T)), and maximum oscillation frequency (f(MAX)) in InP/InGaAs HBT's. The surface recombination current ( J(SR)) was observed to be 3.88 mu A/mu m which was slightly worse than the conventional GaAs/AlGaAs HBT's with AlGaAs ledge. We also presented a simple formula for f(T) and emitter area. Moreover, a guide-map which gives insight into the relation between the emitter area and high frequency performance was presented based on the investigation of the extracted parameters determining the RF performance.
Publisher
KOREAN PHYSICAL SOC
Issue Date
1999-12
Language
English
Article Type
Article; Proceedings Paper
Keywords

HETEROJUNCTION BIPOLAR-TRANSISTORS; SURFACE RECOMBINATION CURRENT

Citation

JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.35, pp.S1051 - S1054

ISSN
0374-4884
URI
http://hdl.handle.net/10203/70966
Appears in Collection
EE-Journal Papers(저널논문)
Files in This Item
There are no files associated with this item.
This item is cited by other documents in WoS
⊙ Detail Information in WoSⓡ Click to see webofscience_button
⊙ Cited 1 items in WoS Click to see citing articles in records_button

qr_code

  • mendeley

    citeulike


rss_1.0 rss_2.0 atom_1.0