Sub-5nm all-around gate FinFETs with 3nm fin width were
fabricated for the first time. The n-channel FinFET of sub-5nm
with 1.4nm HfO2 shows an IDsat of 497μA/μm at VG=VD=1.0V.
Characteristics of sub-5nm transistor are verified by using 3-D
simulations as well as analytical models. A threshold voltage
increases as the fin width reduces by quantum confinement effects.
The threshold voltage shift was fitted to a theoretical model with
consideration of the first-order perturbation theory. And a channel
orientation effect, based on a current-flow direction, is shown.