Effect of substrates on morphological evolution of a film in the silicon CVD process: approach by charged cluster model

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Film morphology depends on the types of substrates used in the CVD process. This dependency has been studied based on the charged duster model in the silicon CVD process. There exists a strong correlation between microstructure evolution and the charge transfer rate (CTR) of substrate materials. Films tended to be porous on substrates with a high CTR and dense on substrates with low CTR. The microstructure evolution could be explained by the interaction of charged clusters with the substrate. On substrates with a high CTR, charged clusters lose their charge quickly prior to landing. The resultant neutral clusters undergo attraction-dominant random sticking (flocculation), leading to a porous structure. On substrates with a low CTR, charged clusters lose their charge slowly after landing and undergo repulsion-dominant selective sticking (deflocculation), leading to a dense film. (C) 2000 Elsevier Science B.V. All rights reserved.
Publisher
ELSEVIER SCIENCE BV
Issue Date
2000-09
Language
ENG
Article Type
Article
Keywords

CHEMICAL-VAPOR-DEPOSITION; DIAMOND; SI

Citation

JOURNAL OF CRYSTAL GROWTH, v.218, no.1, pp.27 - 32

ISSN
0022-0248
DOI
10.1016/S0022-0248(00)00542-X
URI
http://hdl.handle.net/10203/69791
Appears in Collection
NE-Journal Papers(저널논문)
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