Comparison study of structural and optical properties of InxGa1-xN/GaN quantum wells with different in compositions

The effect of In on the structural and optical properties of InxGa1-xN/GaN multiple quantum wells (MQWs) was investigated. These were five-period MQWs grown on sapphire by metalorganic chemical vapor deposition. Increasing the In composition caused broadening of the high-resolution x-ray diffraction superlattice satellite peak and the photoluminescence-excitation bandedge. This indicates that the higher In content degrades the interface quality because of nonuniform In incorporation into the GaN layer. However, the samples with higher In compositions have lower room temperature (RT) stimulated (SE) threshold densities and lower nonradiative recombination rates. The lower RT SE threshold densities of the higher In samples show that the suppression of nonradiative recombination by In overcomes the drawback of greater interface imperfection.
Publisher
MATERIALS RESEARCH SOCIETY
Issue Date
2000
Language
English
Article Type
Article; Proceedings Paper
Keywords

EXCITON LOCALIZATION; LASER-DIODES

Citation

MRS INTERNET JOURNAL OF NITRIDE SEMICONDUCTOR RESEARCH, v.5, pp.12 - 7

ISSN
1092-5783
URI
http://hdl.handle.net/10203/69776
Appears in Collection
PH-Journal Papers(저널논문)
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