Low-frequency noise characteristics of ultrathin body p-MOSFETs with molybdenum gate

We report the low-frequency noise characteristics of ultrathin body (UTB) p-channel MOSFETs with molybdenum (Mo) as the gate material. Using the number fluctuation model with correlated mobility fluctuation, the dependence of the noise behavior on bias condition is explained. The impact of nitrogen implantation (for gate work function engineering) on the noise behavior is also presented. An exponential increase in noise with nitrogen implant dose is attributed to interface-trap generation caused by nitrogen penetration through the gate oxide.
Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Issue Date
2003-01
Language
ENG
Keywords

TRANSISTORS

Citation

IEEE ELECTRON DEVICE LETTERS, v.24, no.1, pp.31 - 33

ISSN
0741-3106
DOI
10.1109/LED.2002.807025
URI
http://hdl.handle.net/10203/691
Appears in Collection
EE-Journal Papers(저널논문)
Files in This Item
low-frequency%20noise%20characteristics%20of%20ultrathin%20body%20p-MOSFETs%20with%20molybdenum%20gate.pdf(276.93 kB)Download
  • Hit : 642
  • Download : 146
  • Cited 0 times in thomson ci
This item is cited by other documents in WoS
⊙ Detail Information in WoSⓡClick to seewebofscience_button
⊙ Cited 9 items in WoSClick to see citing articles inrecords_button

qr_code

  • mendeley

    citeulike


rss_1.0 rss_2.0 atom_1.0