Origin of temperature-sensitive hole current at low gate voltage regime in ultrathin gate oxide

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The carrier-separation characteristics of a p-channel metal-oxide-semiconductor field-effect transistor with 29 Angstrom gate oxide has been measured at various temperatures from 90 to 375 K. It is found that the gate and source/drain currents at low gate voltage regime (below 0.5 V) were correlated and strongly dependent on temperature above 250 K. The earlier observation has been attributed to the existence of a temperature-sensitive hole direct-tunneling current due to the strong temperature sensitivity of surface hole's concentration at low voltage regime. (C) 2000 American Institute of Physics. [S0021-8979(00)03018-1].
Publisher
AMER INST PHYSICS
Issue Date
2000-09
Language
English
Article Type
Article
Citation

JOURNAL OF APPLIED PHYSICS, v.88, no.5, pp.2872 - 2876

ISSN
0021-8979
DOI
10.1063/1.1288169
URI
http://hdl.handle.net/10203/69091
Appears in Collection
EE-Journal Papers(저널논문)
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