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College of Engineering(공과대학)Dept. of Materials Science and Engineering(신소재공학과)MS-Journal Papers(저널논문)

Growth and the electrical properties of epitaxial CrSi2 films prepared on Si(111) substrates

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dc.contributor.authorKim, KHko
dc.contributor.authorLee, JDko
dc.contributor.authorLee, JJko
dc.contributor.authorChoi, CKko
dc.contributor.authorLee, JeongYongko
dc.contributor.authorLee, YPko
dc.date.accessioned2013-02-27T11:44:43Z-
dc.date.available2013-02-27T11:44:43Z-
dc.date.created2012-02-06-
dc.date.created2012-02-06-
dc.date.issued1998-07-
dc.identifier.citationJOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.33, no.1, pp.71 - 75-
dc.identifier.issn0374-4884-
dc.identifier.urihttp://hdl.handle.net/10203/68352-
dc.description.abstractAbout a 290-Angstrom-thick CrSi2 film was epitaxially grown on a Si(lll) substrate by Cr deposition on a Si(lll)-7x7 substrate at similar to 450 degrees C followed by en situ annealing at similar to 1000 degrees C for 10 min. X-ray diffraction and transmission electron microscopy showed that the CrSi2(001) plane grew parallel to the Si(lll) plane with a CrSi2[210]parallel to Si[110] matching face relationship. CrSi2 is a p-type degenerate semiconductor. The electrical resistivity at room temperature was similar to 5 x 10(-3) Omega cm, and the energy band gap deduced from the temperature dependence of resistivity was similar to 0.3 eV.-
dc.languageEnglish-
dc.publisherKOREAN PHYSICAL SOC-
dc.subjectTHIN-FILMS-
dc.subjectHETEROEPITAXIAL GROWTH-
dc.subjectSILICIDES-
dc.subjectSILICON-
dc.titleGrowth and the electrical properties of epitaxial CrSi2 films prepared on Si(111) substrates-
dc.typeArticle-
dc.identifier.wosid000074932100012-
dc.identifier.scopusid2-s2.0-0032398806-
dc.type.rimsART-
dc.citation.volume33-
dc.citation.issue1-
dc.citation.beginningpage71-
dc.citation.endingpage75-
dc.citation.publicationnameJOURNAL OF THE KOREAN PHYSICAL SOCIETY-
dc.contributor.localauthorLee, JeongYong-
dc.contributor.nonIdAuthorKim, KH-
dc.contributor.nonIdAuthorLee, JD-
dc.contributor.nonIdAuthorLee, JJ-
dc.contributor.nonIdAuthorChoi, CK-
dc.contributor.nonIdAuthorLee, YP-
dc.type.journalArticleArticle-
dc.subject.keywordPlusTHIN-FILMS-
dc.subject.keywordPlusHETEROEPITAXIAL GROWTH-
dc.subject.keywordPlusSILICIDES-
dc.subject.keywordPlusSILICON-
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