Carrier-induced Er3+ luminescence quenching of erbium-doped silicon-rich silicon oxide

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The quenching of Er3+ luminescence induced by carriers in silicon nanoclusters of Er-doped silicon-rich silicon oxide (SRSO) is investigated. The dependence of Er3+ photoluminescence intensities and lifetimes upon the temperature, pump power, and the background illumination intensity shows that in SRSO, Auger-type interactions with carriers in the host matrix that can severely limit the Er3+ luminescence efficiency are greatly suppressed. The results also show that efficient optoelectronic devices using Er-doped SRSO may be feasible. (C) 1999 American Institute of Physics. [S0003-6951(99)04652-5].
Publisher
AMER INST PHYSICS
Issue Date
1999-12
Language
English
Article Type
Article
Keywords

SI NANOCRYSTALS; ENERGY-TRANSFER; EXCITATION; PHOTOLUMINESCENCE; ELECTROLUMINESCENCE; DEEXCITATION; SIO2-FILMS; DEPENDENCE

Citation

APPLIED PHYSICS LETTERS, v.75, no.26, pp.4070 - 4072

ISSN
0003-6951
DOI
10.1063/1.125539
URI
http://hdl.handle.net/10203/67878
Appears in Collection
NT-Journal Papers(저널논문)
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