A 2 WCMOS hybrid switching amplitude modulator for EDGE polar transmitters

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dc.contributor.authorKwak, TWko
dc.contributor.authorLee, MCko
dc.contributor.authorCho, Gyu-Hyeongko
dc.date.accessioned2008-07-31-
dc.date.available2008-07-31-
dc.date.created2012-02-06-
dc.date.created2012-02-06-
dc.date.issued2007-12-
dc.identifier.citationIEEE JOURNAL OF SOLID-STATE CIRCUITS, v.42, pp.2666 - 2676-
dc.identifier.issn0018-9200-
dc.identifier.urihttp://hdl.handle.net/10203/6692-
dc.description.abstractThis paper presents a hybrid switching amplitude modulator for class-E2 EDGE polar transmitters. To achieve both high efficiency and high speed, it consists of a wideband buffered linear amplifier as a voltage source and a PWM switching amplifier with a 2 MHz switching frequency as a dependent current source. The linear amplifier with a novel class-AB topology has a high current-driving capability of approximately 300 mA with a bandwidth wider than 10 MHz. It can also operate on four quadrants with very low output impedance of about 200 m Omega at the switching frequency attenuating the output ripple voltage to less than 12 mV(PP), A feedforward path, a PWM control, and a third-order ripple filter are used to reduce the current burden of the linear amplifier. The output voltage of the hybrid modulator ranges from 0.4 to 3 V for a 3.5 V supply. It can drive an RF power amplifier with an equivalent impedance of 4 Omega up to a maximum output power of 2.25 W with a maximum efficiency of 88.3%. The chip has been fabricated in a 0.35 mu m CMOS process and occupies an area of 4.7 mm(2).-
dc.languageEnglish-
dc.language.isoen_USen
dc.publisherIEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC-
dc.subjectPOWER-AMPLIFIER-
dc.subjectHIGH-EFFICIENCY-
dc.subjectLOW-VOLTAGE-
dc.titleA 2 WCMOS hybrid switching amplitude modulator for EDGE polar transmitters-
dc.typeArticle-
dc.identifier.wosid000251292000004-
dc.identifier.scopusid2-s2.0-51849143800-
dc.type.rimsART-
dc.citation.volume42-
dc.citation.beginningpage2666-
dc.citation.endingpage2676-
dc.citation.publicationnameIEEE JOURNAL OF SOLID-STATE CIRCUITS-
dc.embargo.liftdate9999-12-31-
dc.embargo.terms9999-12-31-
dc.contributor.localauthorCho, Gyu-Hyeong-
dc.contributor.nonIdAuthorKwak, TW-
dc.contributor.nonIdAuthorLee, MC-
dc.type.journalArticleArticle; Proceedings Paper-
dc.subject.keywordAuthorbuffer-
dc.subject.keywordAuthorclass AB-
dc.subject.keywordAuthordc-dc converter-
dc.subject.keywordAuthorEDGE-
dc.subject.keywordAuthorlow dropout (LDO)-
dc.subject.keywordAuthorlow output impedance-
dc.subject.keywordAuthoroperational amplifier-
dc.subject.keywordAuthorpolar transmitter-
dc.subject.keywordAuthorpower amplifier (PA)-
dc.subject.keywordAuthorpulsewidth modulation (PWM)-
dc.subject.keywordAuthorswitching amplifier-
dc.subject.keywordPlusPOWER-AMPLIFIER-
dc.subject.keywordPlusHIGH-EFFICIENCY-
dc.subject.keywordPlusLOW-VOLTAGE-
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