PRESSURE DEPENDENCES OF BAND-GAPS AND OPTICAL-PHONON FREQUENCY IN CUBIC SIC

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The high-pressure behavior of the direct and indirect band gaps in zinc-blende-structure SiC is examined with use of self-consistent ab initio pseudopotential calculations. The fundamental band gap from GAMMA-15-nu to X1c is found to decrease linearly with pressure up to 200 kbar. This result disagrees with a recent experimental finding of strong sublinear behavior at pressures of 10 to 15 kbar. The linear pressure coefficients of the fundamental band pp and the transverse-optical-phonon frequency at the GAMMA-point in the Brillouin zone are in good agreement with measured values.
Publisher
AMERICAN PHYSICAL SOC
Issue Date
1991-07
Language
English
Article Type
Article
Keywords

GROUND-STATE PROPERTIES; SILICON-CARBIDE; RAMAN PHONONS; COEFFICIENTS; CHARGE; GE

Citation

PHYSICAL REVIEW B, v.44, no.3, pp.1053 - 1056

ISSN
0163-1829
URI
http://hdl.handle.net/10203/66592
Appears in Collection
PH-Journal Papers(저널논문)
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