EFFECT OF STRESS SIGN AND FILM THICKNESS ON INTERFACE NUCLEATION OF MISFIT DISLOCATIONS IN STRAINED MULTILAYERS

Cited 0 time in webofscience Cited 0 time in scopus
  • Hit : 222
  • Download : 0
The strain relaxation mechanism via the homogeneous nucleation of misfit dislocations from the heterointerface in coherently strained layers has been investigated with transmission electron microscopy. It is identified that the dislocations nucleated from the interface are displayed in the form of 90-degrees partial, 30-degrees partial, and 60-degrees perfect dislocations, depending on stress sign and thickness of the strained layer. The tendency is interpreted in terms of the strain relaxation efficiency which is given by the ratio of relieved strain energy to dislocation line energy.
Publisher
AMER INST PHYSICS
Issue Date
1994-05
Language
English
Article Type
Article
Keywords

GAINASP/INP HETEROSTRUCTURE; ZN-DIFFUSION; GENERATION; RELAXATION

Citation

JOURNAL OF APPLIED PHYSICS, v.75, no.10, pp.4990 - 4993

ISSN
0021-8979
URI
http://hdl.handle.net/10203/66480
Appears in Collection
EE-Journal Papers(저널논문)MS-Journal Papers(저널논문)
Files in This Item
There are no files associated with this item.

qr_code

  • mendeley

    citeulike


rss_1.0 rss_2.0 atom_1.0