HOMOGENEOUS NUCLEATION OF MISFIT DISLOCATIONS IN STRAINED LAYERS

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The mechanism of strain relaxation by homogeneous nucleation of misfit dislocations from the interface in strained layers has been investigated. Transmission electron microscopy examination in a coherently strained GaInAsP/GaInP heterostructure demonstrated that the critical thickness of the strained layer for the nucleation of 90 degrees 1/6[112] partial dislocations from a tensile interface is much shallower than that of 60 degrees 1/2[110] perfect dislocations from a compressive interface. A critical thickness model for the interface nucleation of these dislocations is developed as a modification of the classical surface nucleation model.
Publisher
JAPAN J APPLIED PHYSICS
Issue Date
1994-06
Language
English
Article Type
Article
Keywords

ZN-DIFFUSION; GAINASP/INP HETEROSTRUCTURE; GENERATION; RELAXATION; DEFECTS

Citation

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES REVIEW PAPERS, v.33, no.6A, pp.3409 - 3414

ISSN
0021-4922
URI
http://hdl.handle.net/10203/66445
Appears in Collection
EE-Journal Papers(저널논문)MS-Journal Papers(저널논문)
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