SUPPRESSION OF NUCLEATION DURING CRYSTALLIZATION OF AMORPHOUS THIN SI FILMS

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The ability to selectively suppress crystal nucleation during the crystallization of amorphous Si films is often desirable, but is not generally possible. We demonstrate that a periodic two-step process-involving intermediate temperature ion irradiation followed by high-temperature isothermal annealing-can suppress nucleation in amorphous regions without destroying existing crystals or inhibiting crystal growth. When interpreted in the context of transient nucleation theory, our results indicate that the size distribution of critical and subcritical-sized clusters is modified by exposure to intermediate temperature high-energy ion irradiation. The reduction in the population of critical-sized clusters, which presumably occurs via an interfacial amorphization process, in turn leads to a prolonged incubation period in the subsequent thermal annealing step during which nucleation is negligible but crystal growth is substantial.
Publisher
AMER INST PHYSICS
Issue Date
1991-10
Language
English
Article Type
Article
Keywords

SILICON FILMS

Citation

APPLIED PHYSICS LETTERS, v.59, no.18, pp.2314 - 2316

ISSN
0003-6951
DOI
10.1063/1.106054
URI
http://hdl.handle.net/10203/66292
Appears in Collection
NT-Journal Papers(저널논문)
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