EFFECTS OF SURFACE PRETREATMENT OF POLYSILICON ELECTRODE PRIOR TO SI3N4 DEPOSITION ON THE ELECTRICAL CHARACTERISTICS OF SI3N4 DIELECTRIC FILMS

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dc.contributor.authorYoon, Giwanko
dc.contributor.authorJOSHI, ABko
dc.contributor.authorKWONG, DLko
dc.contributor.authorMATHEWS, VKko
dc.contributor.authorTHAKUR, RPSko
dc.contributor.authorFAZAN, PCko
dc.date.accessioned2013-02-25T23:01:34Z-
dc.date.available2013-02-25T23:01:34Z-
dc.date.created2012-02-06-
dc.date.created2012-02-06-
dc.date.created2012-02-06-
dc.date.issued1994-03-
dc.identifier.citationIEEE TRANSACTIONS ON ELECTRON DEVICES, v.41, no.3, pp.347 - 351-
dc.identifier.issn0018-9383-
dc.identifier.urihttp://hdl.handle.net/10203/65892-
dc.description.abstractEffects of various surface pretreatments of polysilicon electrode prior to Si3N4 deposition on leakage current, time-dependent dielectric breakdown (TDDB) and charge trapping characteristics of thin Si3N4 films deposited on rugged and smooth poly-Si are investigated, Surface pretreatments consist of different combinations of HP clean, rapid thermal H-2-Ar clean, and rapid thermal NH3-nitridation (RTN) and are intended to modify the surface of bottom poly-Si electrode. Results show that RTN treatments lead to lower leakage current, reduced charge trapping, and superior TDDB characteristics as compared to rapid thermal H-2-Ar clean.-
dc.languageEnglish-
dc.publisherIEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC-
dc.titleEFFECTS OF SURFACE PRETREATMENT OF POLYSILICON ELECTRODE PRIOR TO SI3N4 DEPOSITION ON THE ELECTRICAL CHARACTERISTICS OF SI3N4 DIELECTRIC FILMS-
dc.typeArticle-
dc.identifier.wosidA1994NF11200010-
dc.identifier.scopusid2-s2.0-0028400632-
dc.type.rimsART-
dc.citation.volume41-
dc.citation.issue3-
dc.citation.beginningpage347-
dc.citation.endingpage351-
dc.citation.publicationnameIEEE TRANSACTIONS ON ELECTRON DEVICES-
dc.identifier.doi10.1109/16.275219-
dc.contributor.localauthorYoon, Giwan-
dc.contributor.nonIdAuthorJOSHI, AB-
dc.contributor.nonIdAuthorKWONG, DL-
dc.contributor.nonIdAuthorMATHEWS, VK-
dc.contributor.nonIdAuthorTHAKUR, RPS-
dc.contributor.nonIdAuthorFAZAN, PC-
dc.type.journalArticleArticle-
dc.subject.keywordPlusRAPID THERMAL NITRIDATION-
dc.subject.keywordPlusSILICON-NITRIDE-
dc.subject.keywordPlusRUGGED POLYSILICON-
dc.subject.keywordPlusOXIDE-
dc.subject.keywordPlusCONDUCTION-
dc.subject.keywordPlusBREAKDOWN-
dc.subject.keywordPlusDRAM-
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