DC Field | Value | Language |
---|---|---|
dc.contributor.author | Yoon, Giwan | ko |
dc.contributor.author | JOSHI, AB | ko |
dc.contributor.author | KWONG, DL | ko |
dc.contributor.author | MATHEWS, VK | ko |
dc.contributor.author | THAKUR, RPS | ko |
dc.contributor.author | FAZAN, PC | ko |
dc.date.accessioned | 2013-02-25T23:01:34Z | - |
dc.date.available | 2013-02-25T23:01:34Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 1994-03 | - |
dc.identifier.citation | IEEE TRANSACTIONS ON ELECTRON DEVICES, v.41, no.3, pp.347 - 351 | - |
dc.identifier.issn | 0018-9383 | - |
dc.identifier.uri | http://hdl.handle.net/10203/65892 | - |
dc.description.abstract | Effects of various surface pretreatments of polysilicon electrode prior to Si3N4 deposition on leakage current, time-dependent dielectric breakdown (TDDB) and charge trapping characteristics of thin Si3N4 films deposited on rugged and smooth poly-Si are investigated, Surface pretreatments consist of different combinations of HP clean, rapid thermal H-2-Ar clean, and rapid thermal NH3-nitridation (RTN) and are intended to modify the surface of bottom poly-Si electrode. Results show that RTN treatments lead to lower leakage current, reduced charge trapping, and superior TDDB characteristics as compared to rapid thermal H-2-Ar clean. | - |
dc.language | English | - |
dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | - |
dc.title | EFFECTS OF SURFACE PRETREATMENT OF POLYSILICON ELECTRODE PRIOR TO SI3N4 DEPOSITION ON THE ELECTRICAL CHARACTERISTICS OF SI3N4 DIELECTRIC FILMS | - |
dc.type | Article | - |
dc.identifier.wosid | A1994NF11200010 | - |
dc.identifier.scopusid | 2-s2.0-0028400632 | - |
dc.type.rims | ART | - |
dc.citation.volume | 41 | - |
dc.citation.issue | 3 | - |
dc.citation.beginningpage | 347 | - |
dc.citation.endingpage | 351 | - |
dc.citation.publicationname | IEEE TRANSACTIONS ON ELECTRON DEVICES | - |
dc.identifier.doi | 10.1109/16.275219 | - |
dc.contributor.localauthor | Yoon, Giwan | - |
dc.contributor.nonIdAuthor | JOSHI, AB | - |
dc.contributor.nonIdAuthor | KWONG, DL | - |
dc.contributor.nonIdAuthor | MATHEWS, VK | - |
dc.contributor.nonIdAuthor | THAKUR, RPS | - |
dc.contributor.nonIdAuthor | FAZAN, PC | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordPlus | RAPID THERMAL NITRIDATION | - |
dc.subject.keywordPlus | SILICON-NITRIDE | - |
dc.subject.keywordPlus | RUGGED POLYSILICON | - |
dc.subject.keywordPlus | OXIDE | - |
dc.subject.keywordPlus | CONDUCTION | - |
dc.subject.keywordPlus | BREAKDOWN | - |
dc.subject.keywordPlus | DRAM | - |
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.