EFFECTS OF SURFACE PRETREATMENT OF POLYSILICON ELECTRODE PRIOR TO SI3N4 DEPOSITION ON THE ELECTRICAL CHARACTERISTICS OF SI3N4 DIELECTRIC FILMS

Effects of various surface pretreatments of polysilicon electrode prior to Si3N4 deposition on leakage current, time-dependent dielectric breakdown (TDDB) and charge trapping characteristics of thin Si3N4 films deposited on rugged and smooth poly-Si are investigated, Surface pretreatments consist of different combinations of HP clean, rapid thermal H-2-Ar clean, and rapid thermal NH3-nitridation (RTN) and are intended to modify the surface of bottom poly-Si electrode. Results show that RTN treatments lead to lower leakage current, reduced charge trapping, and superior TDDB characteristics as compared to rapid thermal H-2-Ar clean.
Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Issue Date
1994-03
Language
ENG
Keywords

RAPID THERMAL NITRIDATION; SILICON-NITRIDE; RUGGED POLYSILICON; OXIDE; CONDUCTION; BREAKDOWN; DRAM

Citation

IEEE TRANSACTIONS ON ELECTRON DEVICES, v.41, no.3, pp.347 - 351

ISSN
0018-9383
DOI
10.1109/16.275219
URI
http://hdl.handle.net/10203/65892
Appears in Collection
EE-Journal Papers(저널논문)
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