EFFECTS OF SURFACE PRETREATMENT OF POLYSILICON ELECTRODE PRIOR TO SI3N4 DEPOSITION ON THE ELECTRICAL CHARACTERISTICS OF SI3N4 DIELECTRIC FILMS

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Effects of various surface pretreatments of polysilicon electrode prior to Si3N4 deposition on leakage current, time-dependent dielectric breakdown (TDDB) and charge trapping characteristics of thin Si3N4 films deposited on rugged and smooth poly-Si are investigated, Surface pretreatments consist of different combinations of HP clean, rapid thermal H-2-Ar clean, and rapid thermal NH3-nitridation (RTN) and are intended to modify the surface of bottom poly-Si electrode. Results show that RTN treatments lead to lower leakage current, reduced charge trapping, and superior TDDB characteristics as compared to rapid thermal H-2-Ar clean.
Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Issue Date
1994-03
Language
ENG
Article Type
Article
Appears in Collection
EE-Journal Papers(저널논문)
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