DC Field | Value | Language |
---|---|---|
dc.contributor.author | HAN, LK | ko |
dc.contributor.author | Yoon, Giwan | ko |
dc.contributor.author | KWONG, DL | ko |
dc.contributor.author | MATHEWS, VK | ko |
dc.contributor.author | FAZAN, PC | ko |
dc.date.accessioned | 2013-02-25T23:01:13Z | - |
dc.date.available | 2013-02-25T23:01:13Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 1994-08 | - |
dc.identifier.citation | IEEE ELECTRON DEVICE LETTERS, v.15, no.8, pp.280 - 282 | - |
dc.identifier.issn | 0741-3106 | - |
dc.identifier.uri | http://hdl.handle.net/10203/65891 | - |
dc.description.abstract | This paper reports the effects of post-deposition rapid thermal annealing on the electrical characteristics of chemical vapor deposited (CVD) Ta2O5 (approximately 10 nm) on NH3-nitrided polycrystalline silicon (poly-Si) storage electrodes for stacked DRAM applications. Three different post-deposition annealing conditions are compared: a) 800-degrees-C rapid thermal O2 annealing (RTO) for 20 sec followed by rapid thermal N2 annealing (RTA) for 40 sec, b) 800-degrees-C RTO for 60 sec and c) 900-degrees-C RTO for 60 sec. Results show that an increase in RTO temperature and time decreases leakage current at the cost of capacitance. However, over-reoxidation induces thicker oxynitride formation at the Ta2O5/poly-Si interface, resulting in the worst time-dependent dielectric breakdown (TDDB) characteristics. | - |
dc.language | English | - |
dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | - |
dc.title | EFFECTS OF POST DEPOSITION ANNEALING ON THE ELECTRICAL-PROPERTIES AND RELIABILITY OF ULTRATHIN CHEMICAL-VAPOR-DEPOSITED TA2O5 FILMS | - |
dc.type | Article | - |
dc.identifier.wosid | A1994PB03100006 | - |
dc.type.rims | ART | - |
dc.citation.volume | 15 | - |
dc.citation.issue | 8 | - |
dc.citation.beginningpage | 280 | - |
dc.citation.endingpage | 282 | - |
dc.citation.publicationname | IEEE ELECTRON DEVICE LETTERS | - |
dc.identifier.doi | 10.1109/55.296216 | - |
dc.contributor.localauthor | Yoon, Giwan | - |
dc.contributor.nonIdAuthor | HAN, LK | - |
dc.contributor.nonIdAuthor | KWONG, DL | - |
dc.contributor.nonIdAuthor | MATHEWS, VK | - |
dc.contributor.nonIdAuthor | FAZAN, PC | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordPlus | DRAMS | - |
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