DC Field | Value | Language |
---|---|---|
dc.contributor.author | LEE, JL | ko |
dc.contributor.author | UEDONO, A | ko |
dc.contributor.author | TANIGAWA, S | ko |
dc.contributor.author | Lee, JeongYong | ko |
dc.date.accessioned | 2013-02-25T21:59:34Z | - |
dc.date.available | 2013-02-25T21:59:34Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 1990-05 | - |
dc.identifier.citation | JOURNAL OF APPLIED PHYSICS, v.67, no.10, pp.6153 - 6158 | - |
dc.identifier.issn | 0021-8979 | - |
dc.identifier.uri | http://hdl.handle.net/10203/65610 | - |
dc.language | English | - |
dc.publisher | AMER INST PHYSICS | - |
dc.title | VACANCY-TYPE DEFECTS IN SI+-IMPLANTED GAAS AND ITS EFFECTS ON ELECTRICAL ACTIVATION BY RAPID THERMAL ANNEALING | - |
dc.type | Article | - |
dc.identifier.wosid | A1990DE15000020 | - |
dc.identifier.scopusid | 2-s2.0-0342517326 | - |
dc.type.rims | ART | - |
dc.citation.volume | 67 | - |
dc.citation.issue | 10 | - |
dc.citation.beginningpage | 6153 | - |
dc.citation.endingpage | 6158 | - |
dc.citation.publicationname | JOURNAL OF APPLIED PHYSICS | - |
dc.identifier.doi | 10.1063/1.345177 | - |
dc.contributor.localauthor | Lee, JeongYong | - |
dc.contributor.nonIdAuthor | LEE, JL | - |
dc.contributor.nonIdAuthor | UEDONO, A | - |
dc.contributor.nonIdAuthor | TANIGAWA, S | - |
dc.type.journalArticle | Article | - |
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