VACANCY-TYPE DEFECTS IN SI+-IMPLANTED GAAS AND ITS EFFECTS ON ELECTRICAL ACTIVATION BY RAPID THERMAL ANNEALING

Publisher
AMER INST PHYSICS
Issue Date
1990-05
Language
ENG
Citation

JOURNAL OF APPLIED PHYSICS, v.67, no.10, pp.6153 - 6158

ISSN
0021-8979
DOI
10.1063/1.345177
URI
http://hdl.handle.net/10203/65610
Appears in Collection
MS-Journal Papers(저널논문)
Files in This Item
There are no files associated with this item.
  • Hit : 137
  • Download : 0
  • Cited 0 times in thomson ci
This item is cited by other documents in WoS
⊙ Detail Information in WoSⓡClick to seewebofscience_button
⊙ Cited 30 items in WoSClick to see citing articles inrecords_button

qr_code

  • mendeley

    citeulike


rss_1.0 rss_2.0 atom_1.0